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rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 12 preliminary rfha102 1u 6 0w gan wide - band pulsed power amplifier the RFHA1021U is a 50v 60w high power amplifier designed for s - band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. the RFHA1021U is an input matched power gan transistor with 26db small signal gain packaged in a ceramic package. the package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. ease of i ntegration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. functional block diagram ordering information RFHA1021Us2 sample bag with 2 pieces RFHA1021Usb bag with 5 pieces RFHA1021Usq bag with 25 pieces RFHA1021Usr 7 short reel with 50 pieces rfha102 1u tr13 13 reel with 250 pieces RFHA1021Upcba - 410 fully assembled evaluation board optimized for 3.1 - 3.5ghz; 50v package: flanged ceramic, 8 pin features wideband operation: 3.1ghz to 3.5 ghz advanced gan hemt technology input optimized evaluation board layout for 50 ? operation integrated matching components for high terminal impedances at input 50v operation typical performance ? output pulsed power 6 0w ? pulse width 1 00 s, duty cycle 10% ? small signal gain 2 6db ? high efficiency 49 % ? - 40 c to 85 c operation applications radar air traffic control and surveillance general purpose broadband amplifie rs RFHA1021U
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 2 of 12 rf ha1021u p reliminary absolute maximum rat ings parameter rating unit drain voltage output stage (v d2 ) 150 v drain voltage input stage (v d 1 ) 54 v gate voltage (v g ) - 6 to 2 v operating voltage 50 v ruggedness (vswr) 10:1 storage temperature range - 55 to +12 5 c operating temperature range (t c ) - 40 to +8 5 c operating junction temperature (t j ) 25 0 c human body model class 1a mttf (t j < 200 c, 95% confidence limits)* 3 e + 0 6 hours thermal resistance, r th (junction to case) output stage c /w t c =85 c, dc bias only 2.6** t c =85 c, 100s pulse, 10% duty cycle 0.5** caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. * mttf C median time to failure for wear - out failure mode (30% i dss degradation) which is determined by the technology process r eliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the de vice voltage and current must not exceed the maxim um operating values specified in the table above . bias conditions should also satisfy the following expression: p diss < (t j C tc) / r th j - c and t c = t case ** r th data estimates from rf3932 (equivalent output die size) nominal operating parameters parameter specification unit condition min typ max recommended operating conditions drain voltage (v dsq ) 50 v gate voltage (v gsq ) - 5 - 3 - 2 v drain bias current 264 ma stage 1 = 44ma, stage 2 = 220ma frequency of operation 3100 3500 mhz dc functional test v gsq stage 1 - 3.1 v v d = 50 v, i d stage 1 = 42ma v gsq stage 2 - 3.3 v v d = 50 v, i d stage 2 = 2 20 ma v ds(on) C stage 2 0.45 v v g = 0v, i d = 1.0 a , wafer level test
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 3 of 12 rf ha1021u p reliminary parameter specification unit condition min typ max rf functional test input return loss - 13.5 - 6.2 db f = 3.1ghz, p in = 25dbm [1,2] output power 47.5 48.45 db m efficiency 40 42.0 % input return loss - 13.5 - 6.2 db f = 3. 5 ghz, p in = 2 8 dbm [1,2] output power 47.5 48.45 db m efficiency 40 42.0 % rf typical performance small signal gain 2 6 db f = 3.3ghz, p in = 0dbm [1,2] gain variation with temperature tbd db/ c at peak output power [1,2] output power (p sat ) 48.45 dbm f = 3.5ghz [1,2] 70 w drain efficiency 50 % at peak output power (p3db, 3500mhz) [1,2] power gain 24.5 db f = 3.1ghz, p out = 60w [1,2] efficiency 43 % input return loss - 7.2 - 6.2 db power gain 23.1 db f = 3.5 ghz, p out = 60w [1,2] efficiency 49 % input return loss - 10.7 - 6.2 db [1] test conditions: pw = 1 00 s, dc = 10%, v dsq = 50v, i dq = 264 ma, t = 25oc. [2] performance in a standard tuned test fixture.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 4 of 12 rf ha1021u p reliminary typical performance in standard fixed tuned test fixture : ( t = 25c unless noted )
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 5 of 12 rf ha1021u p reliminary typical performance in standard fixed tuned test fixture : ( t = 25c unless noted ) (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 6 of 12 rf ha1021u p reliminary package drawing ( dimensions in millimeters [+/ - 0.127])
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 7 of 12 rf ha1021u p reliminary package drawing ( dimensions in millimeters [+/ - 0.127]) (continued) pin names and descriptions pin name description 1 drain 1 dc drain feed input stage 2 n c no connect 3 nc no connect 4 gate 1 dc gate feed input stage 5 rf in rf in input stage 6 n c no connect 7 gate 2 dc gate feed output stage 8 drain 2 v dq2 rf output 9 source source C ground base
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 8 of 12 rf ha1021u p reliminary bias instruction for rfha102 1u 3.1ghz to 3.5ghz evaluation board esd sensitive material. please use proper esd precautions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before po wering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this ground terminal. 3. apply - 5 v to vg 1 and vg2 . 4. apply 50v to vd 1 and vd2 . 5. increase vg1 until drain current for vd1 reaches 44ma or desired bias point. 6. increase vg2 until drain current for vd2 reaches 220ma or desired bias point. 7. turn on the rf input. important note: depletion mode device - when biasing the device v g must be applied befor e v d . when removing bias v d must be removed before v g is removed. failure to follow sequencing will cause the device to fail. note: for optimal rf performance, consistent and optimal heat removal from the base of the package is required. a thin layer of th ermal grease should be applied to the interface between the base of the package and the equipment chassis. it is recommended a small amount of thermal grease is applied to the underside of the device package. even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 9 of 12 rf ha1021u p reliminary proposed evaluation board schematic
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 10 of 12 rf ha1021u p reliminary proposed evaluation board bill of materials component value manufacturer part number c2 cap, 330 f, 20%, 100v, al elec, rad t/h illinois capacitor, inc. 337cke100m c1 cap, 10 f, 20%, 100v, al elc, rad panasonic industrial devices sales eeu - fc2a100 c3, c5 cap, 4.7 f, 10%, 100v, x7r, 2220 murata electronics grm55er72a475ka01l c4, c16 cap, 4.7 f, 10%, 50v, x7r, 1206 murata electronics grm31cr71h475ka12l c7, c8 cap, 0.1 f, 10%, 100v, x7r, 1206 avx corporation 12061c104k4t2a c6, c15 cap, 1000pf, 5%, 50v, c0g, 0805 kemet c0805c102j5gactu c18 cap, 0.6pf, +/ - 0.1pf, 250v, c0g, atc - a american technical ceramics 800a0r6bt250xt c12 cap, 0.8pf, +/ - 0.1pf, 250v, c0g, atc - a american technical ceramics atc800a0r8bt250x c14 cap, 1.2pf, +/ - 0.1pf, 250v, c0g, atc - a american technical ceramics 800a1r2bt250x c9, c10, c11, c13, c17 cap, 22pf, +/ - 0.1pf, 250v, c0g, atc - a american technical ceramics 800a220bt250x c19, c20 cap, 82pf, 5%, 500v, c0g, atc - b american technical ceramics atc800b820jt500xt r1, r2 res, 3.3 ? , 5%, 1/4w, 1206 panasonic industrial devices sales erj - 8geyj3r3v p1, p6 conn, banana jack, green kamaya, inc rmc1/10jptp p3, p5 conn, banana jack, red johnson co 108 - 0902 - 001 p2, p4, p7 conn, banana jack, black johnson co 108 - 0903 - 001 j1, j2 conn, sma, st jack rec, flng mt, t/h emerson network power 142 - 0701 - 631
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 11 of 12 rf ha1021u p reliminary evaluation board layout simulated evaluation board impedances frequency z source ( ? ) z load ( ? ) 3100mhz 50 tbd 3300mhz 50 tbd 3500mhz 50 tbd device impedances reported are the simulated evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13092 4 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implic ation or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommen ded application circuitry and specifications at any time without prior notice. 12 of 12 rf ha1021u p reliminary device handling/environmental conditions rfmd does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower tha n the sourc e voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = - 5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best repr esent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the t hermal resistance provided as r th (junction to case) represents only the packaged device thermal characteristics. this is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, th e package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the maximum of 200 c. proper thermal design includes consideration of ambient temperature and the thermal resista nce from ambient to the back of the package including heatsinking systems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.

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